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| STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK12N05L STK12N06L s s s s s s s V DSS 50 V 60 V R DS( on) < 0.15 < 0.15 ID 12 A 12 A s TYPICAL RDS(on) = 0.115 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE FOR STANDARD PACKAGE APPLICATION ORIENTED CHARACTERIZATION 1 2 3 1 2 3 SOT-82 SOT-194 (option) APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STK12N05L VD S V DG R V GS ID ID ID M(*) P tot T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value STK12N06L 60 60 15 12 8 48 50 0.33 -65 to 175 175 Unit 50 50 V V V A A A W W/o C o o C C (*) Pulse width limited by safe operating area November 1996 1/10 STK12N05L/STK12N06L THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 3 80 0.7 275 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value 12 30 7 8 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 for STK12N05L for STK12N06L T c = 125 oC Min. 50 60 1 10 100 Typ. Max. Unit V V A A nA I DS S IG SS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 15 V ON () Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 5 V Test Conditions ID = 250 A ID = 6 A 15 Min. 1 Typ. 1.6 0.115 Max. 2.5 0.15 Unit V A V DS > ID( on) x RD S(on) max V GS = 10 V DYNAMIC Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 6 A VG S = 0 Min. 4 Typ. 8 350 150 50 500 200 80 Max. Unit S pF pF pF 2/10 STK12N05L/STK12N06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 25 V ID = 6 A VGS = 5 V R G = 50 (see test circuit, figure 3) V DD = 40 V ID = 12 A VGS = 5 V R G = 50 (see test circuit, figure 5) V DD = 40 V ID = 12 A V GS = 5 V Min. Typ. 55 180 120 Max. 80 260 Unit ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 12 6 4 18 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 40 V ID = 12 A R G = 50 VGS = 5 V (see test circuit, figure 5) Min. Typ. 40 60 110 Max. 60 90 160 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM(*) V S D () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A VG S = 0 75 0.15 4 I SD = 12 A di/dt = 100 A/s V DD = 25 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 12 48 1.5 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Areas Thermal Impedance 3/10 STK12N05L/STK12N06L Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STK12N05L/STK12N06L Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STK12N05L/STK12N06L Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms 6/10 STK12N05L/STK12N06L Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/10 STK12N05L/STK12N06L SOT-82 MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F H 7.4 10.5 0.7 0.49 2.4 1.2 15.7 2.2 4.4 3.8 2.54 TYP. MAX. 7.8 11.3 0.9 0.75 2.7 MIN. 0.291 0.413 0.028 0.019 0.04 0.047 0.618 0.087 0.173 0.150 0.100 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 DIM. C A F H c1 b b1 e3 e D B P032A 8/10 STK12N05L/STK12N06L SOT-194 MECHANICAL DATA DIM. MIN. A B b b1 C c1 c2 D e e3 F H P S S1 T 4 2 0.1 7.4 10.5 0.7 0.49 2.4 1.2 1.3 6 2.2 4.4 3.8 2.54 45 (typ.) 0.157 0.079 0.004 mm TYP. MAX. 7.8 11.3 0.9 0.75 2.7 MIN. 0.291 0.413 0.028 0.019 0.094 0.047 0.051 0.236 0.087 0.173 0.150 0.100 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 C A F C1 S T P H e e3 P032B S1 b1 b c2 D 9/10 B STK12N05L/STK12N06L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compone in life support devices or systems without express nts written approval of SGS-THOMSON Microelectonics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 10/10 |
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